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HP41C 参数 Datasheet PDF下载

HP41C图片预览
型号: HP41C
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅晶体管 [NPN SILICON TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 2 页 / 66 K
品牌: HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
 浏览型号HP41C的Datasheet PDF文件第2页  
NPN S I L I C O N T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
HP41C
APPLICATIONS
Medium Power Linear Switching Application.
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
T
stg
——Storage
Temperature………………………… -55~150℃
T
j
——Junction
Temperature…………………………………150℃
P
C
——Collector
Dissipation(T
c
=25℃)…………………………65W
P
C
——Collector
Dissipation
A
=25℃)
(T
…………………………
2W
V
CBO
——Collector-Base
Voltage………………………………100V
V
CEO
——Collector-Emitter
Voltage……………………………100V
V
EB O
——Emitter-Base
Voltage………………………………5V
I
C
——Collector
Current……………………………………………6A
I
B
——Base
Current……………………………………………2A
TO-220
1―Base,B
2―Collector,
C
3― Emitter,E
ELECTRICAL CHARACTERISTICS(T
a
=25℃)
Symbol
Characteristics
Min
Typ
Max
Unit
Test Conditions
BV
CEO
I
CEO
I
EBO
I
CES
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter
Cut-off Current
Collector Cut-off Current
100
0.7
1
400
30
15
75
1.5
2.0
3.0
V
mA
mA
μA
I
C
=30mA,
I
B
=0
V
CE
=60V, I
B
=0
V
EB
=5V, I
C
=0
V
CE
=100V, V
EB
=0
V
CE
=4V, I
C
=0.3A
V
CE
=4V, I
C
=3A
H
FE(1)
DC Current Gain
H
FE(2)
DC Current Gain
V
CE(sat)
V
BE(on)
f
T
Collector- Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain-Bandwidth Product
V
V
MHz
I
C
=6A, I
B
=600mA
V
CE
=4V, I
C
=6A
V
CE
=10V, I
C
=500mA, f=1MHz