Shantou Huashan Electronic Devices Co.,Ltd.
N-Channel MOSFET
HFU1N60
█ APPLICATIONSL
high-Speed Switching.
TO-251
█
ABSOLUTE MAXIMUM RATINGS（T
a
=25℃）
T
stg
——Storage
Temperature……………………………－55~150℃
T
j
——Operating
Junction Temperature
…………………………150℃
P
D
——
Allowable Power Dissipation（T
c
=25℃）…………………28W
V
DSS
——
Drain-Source Voltage
…………………………………
600V
V
GSS
——
Gate-Source Voltage
…………………………………
±
0V
3
I
D
——
Drain Current（T
c
=25℃）……………………………………1A
I
DM
——
Drain Current（Pulsed）……………………………………4A
1―G
2―D
3―S
█
ELECTRICAL CHARACTERISTICS（T
a
=25℃）
Symbol
Characteristics
Min
Typ
Max
Unit
Test Conditions
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
g
FS
Ciss
Coss
Crss
t
d(on)
tr
t
d(off)
t
f
Qg
Qgs
Qgd
Is
V
SD
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate –
Source Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn - On Delay Time
Rise Time
Turn - Off Delay Time
600
2.5
９．３
０．７５
１３０
19
3.5
7
21
13
27
4.8
0.7
2.7
１
V
I
D
=250μA ,V
GS
=0V
μＡ
V
DS
=600V，V
GS
=0
±100 �½�Ａ
V
GS
=±30V , V
DS
=0V
4.5
V
V
DS
= V
GS
, I
D
=250μA
１１．５
１７０
25
4.5
24
52
36
64
6.2
?
S
V
GS
=10V, I
D
=0.5A
V
DS
= 40V , I
D
=0.5A*
pF
pF
pF
nS
nS
nS
nS
nC
nC
nC
V
DS
=25V, V
GS
=0,f=1ＭＨ�½�
Fall Time
Total Gate Charge
Gate–
Source Charge
Gate–
Drain Charge
V
DD
=300V,I
D
=1.1A
R
G
= 25
Ω
*
V
DS
=480V，Ｉ
Ｄ
＝１．１Ａ
Ｖ
ＧＳ
＝１０Ｖ ＊
I
S
=0.5A , V
GS
=0
Continuous Source Current
１
１．４
Ａ
Ｖ
Diode Forward Voltage
Thermal Resistance，
Rth j-c）
（
Junction-to-Case
*Pulse Test：Pulse Width≤300μs，Duty Cycle≤2%
４．５３
℃／Ｗ
HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
