Shantou Huashan Electronic Devices Co.,Ltd.
N-Channel MOSFET
HFP50N06
█
APPLICATIONSL
Low Voltage high-Speed Switching.
TO-220
█
ABSOLUTE MAXIMUM RATINGS（T
a
=25℃）
T
stg
——Storage
Temperature……………………………-55~175℃
T
j
——Operating
Junction Temperature
…………………………150℃
（T
…………………130W
P
D
——
Allowable Power Dissipation
c
=25℃）
V
DSS
——
Drain-Source Voltage
…………………………………
60V
V
GSS
——
Gate-Source Voltage
…………………………………
±2
0V
（
……………………………………50A
I
D
——
Drain Current T
c
=25℃）
1―G
2―D
3―S
█
ELECTRICAL CHARACTERISTICS（T
a
=25℃）
Symbol
Characteristics
Min
Typ
Max
Unit
Test Conditions
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Ciss
Coss
Crss
t
d(on)
tr
t
d(off)
t
f
Qg
Qgs
Qgd
Is
V
SD
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate –Source Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn - On Delay Time
Rise Time
Turn - Off Delay Time
60
1
2.0
880
430
110
60
185
75
60
39
9.5
13
50
1.5
1.15
±100
4.0
0.018 0.023
1140
560
140
130
380
160
130
45
V
μA
nA
V
Ω
pF
pF
pF
nS
nS
nS
nS
nC
nC
nC
I
D
=250μA ,V
GS
=0V
V
DS
= 60V，V
GS
=0
V
GS
=±20V , V
DS
=0V
V
DS
= V
GS
, I
D
=250μA
V
GS
=10V, I
D
=25A
V
DS
=25V, V
GS
=0,f=1MHz
V
DD
=30V, I
D
=25A
R
G
= 50
Ω*
V
DS
=48V
V
GS
=10V
I
D
=50A*
I
S
=50A , V
GS
=0
Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Continuous Source Current
A
V
℃/W
Diode Forward Voltage
Thermal Resistance，
Rth
（j-c）
Junction-to-Case
*Pulse Test：Pulse Width≤300μs，Duty Cycle≤2%
HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
