PNP S I L I C O N T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
█
APPLICATIONS
Mediu�½� Power Linear switching Applications.
HEP32 Series
（HEP32/HEP32A/HEP32B/HEP32C）
█
ABSOLUTE MAXIMUM RATINGS（T
a
=25℃）
T
stg
——Storage
Temperature………………………… -55~150℃
T
j
——Junction
Temperature…………………………………150℃
P
C
——Collector
Dissipation Tc=25℃）
（
……………………………40W
P
C
——Collector
Dissipation（Ta=25℃）……………………………2W
V
CBO
——Collector-Base
Voltage、V
CEO
——Collector-Emitter
Voltage
HEP32……………………………-40V
HEP32A…………………………-60V
HEP32B……………………………-80V
HEP32C…………………………-100V
V
E B O
——Emitter
-Base Voltage………………………………-5V
I
C
——Collector
Current DC）………………………………………-3A
（
I
C
——Collector
Current（DC）……………………………………-3mA
I
C
——Collector
Current（Pulse）……………………………………-5A
Ib——Base Current………………………………………………-1A
TO-220AB
1―Base，B
2―Collector，
C
3―Emitter，E
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ELECTRICAL CHARACTERISTICS（T
a
=25℃）
Symbol
BV
CEO
Characteristics
Collector-Emitter Breakdown Voltage
Min Typ Max Unit
－０．３
－０．３
－２００
－２００
－２００
－２００
５０
－１．２
－１．８
－１
Ｖ
Ｖ
Ｖ
Ｖ
�½�Ａ
�½�Ａ
μＡ
μＡ
μＡ
μＡ
Ｖ
Ｖ
�½�Ａ
ＭＨ�½�
Test Conditions
I
C
=-30mA, I
B
=0
HEP32
－４０
HEP32A
－６０
HEP32B
－８０
HEP32C
－１００
I
CEO
Collector Cut-off Current HEP31/ HEP32A
HEP31B/ HEP32C
I
CES
Collector Cut-off Current
HEP32
HEP32A
HEP32B
HEP32C
H
FE（1）
*DC Current Gain
２５
H
FE（2）
１０
V
CE(sat)
*Collector- Emitter Saturation Voltage
V
BE(ON)
*Base-Emitter On Voltage
I
EBO
Emitter Cut-off Current
f
T
Current Gain-Bandwidth Product
３．０
V
CB
=-30V, I
B
=0
V
CB
=-60V, I
B
=0
V
CE
=-40V, V
EB
=0
V
CE
=-60V, V
EB
=0
V
CE
=-80V, V
EB
=0
V
CE
=-100V, V
EB
=0
V
CE
=-4V, I
C
=-1A
V
CE
=-4V, I
C
=-3A
I
C
=-3A, I
B
=-375mA
V
CE
=-4V, I
C
=-3A
V
EB
=-5V, I
C
=0
V
CE
=-10V,
I
C
=-500mA，
�½�＝１ＭＨ�½�
*
Pulse Test：PW≤300μ�½�，Ｄ�½��½��½� �½��½��½��½��½�≤2%
HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
