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HCR1C60 参数 Datasheet PDF下载

HCR1C60图片预览
型号: HCR1C60
PDF下载: 下载PDF文件 查看货源
内容描述: 可控硅整流器 [Silicon Controlled Rectifier]
分类和应用: 可控硅整流器
文件页数/大小: 3 页 / 720 K
品牌: HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
 浏览型号HCR1C60的Datasheet PDF文件第2页浏览型号HCR1C60的Datasheet PDF文件第3页  
Shantou Huashan Electronic Devices Co.,Ltd.
 
HCR1C60
Silicon Controlled Rectifier
█ Features
* Repetitive Peak Off-State Voltage : 600V
* R.M.S On-State Current(I
T(RMS)
=1A)
* Low On-State Voltage (1.2V(Typ.)@ I
TM
)
 
█ General
Description
Sensitive triggering SCR is suitable for the application where
gate current limited such as small motor control, gate driver
for large SCR, sensing and detecting circuits.
 
Absolute Maximum Ratings
(T
a
=25
 �½��½��½��½��½��½� �½��½��½��½��½��½��½��½��½� �½��½��½��½��½��½��½��½��½�) 
                   
 
 
 
 
T
s t g
——Storage
Temperature ------------------------------------------------------
-40~150℃
T
j
——Operating
Junction Temperature --------------------------------------------------- 125℃ 
V
DRM
——Repetitive
Peak Off-State Voltage -------------------------------------------------------------------- 600V
I
T
RMS
)——R.M.S
On-State Current(180º
Conduction Angles)------------------------------------------1.0A
I
T(AV)
——Average
On-State Current (Half Sine Wave : T
C
= 45 ° ------------------------------------------0.8A
C)
I
TSM
——Surge
On-State Current (1/2 Cycle, 60Hz, Sine Wave, Non-repetitive) -------------------------
I t
——Circuit
Fusing Considerations(t = 8.3ms) -----------------------------------------------------------
P
GM
——Forward
Peak Gate Power Dissipation (T
a
=25℃) 
-------------------------------------------------
2
10A
0.9A s
0.5W
2
 
 
 
 
 
 
 
P
G(AV)
——Forward
Average Gate Power Dissipation (T
a
=25℃,�½�=8.3�½��½�) ---------------------------------0.1W
I
FGM
——Forward
Peak Gate Current ------------------------------------------------------------------------------ 0.2A
V
RGM
——Reverse
Peak Gate Voltage ------------------------------------------------------------------------------- 5V