Shantou Huashan Electronic Devices Co.,Ltd.
█
Electrical Characteristics
（T
a
=25
℃
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Symbol
I
DRM
Items
Repetitive Peak Off-State
Current
Peak On-State Voltage (1)
Gate Trigger Current（2）
Gate Trigger Voltage (2)
Non-Trigger Gate Voltage
Holding Current
Thermal Resistance
Thermal Resistance
Critical Rate of Rise Off-state
Voltage
200
0.2
20
1.3
60
Min.
Typ.
Max.
10
200
1.6
15
1.5
Unit
V
AK
=V
DRM
uA
V
mA
V
Conditions
HCP10C60
T
a
=25
℃
T
a
=125
℃
I
TM
=20A,tp=380µ
s
V
AK
=6V(DC), R
L
=10 ohm
V
AK
=6V(DC), R
L
=10 ohm
V
TM
I
GT
V
G T
V
GD
I
H
Rth(j-c)
Rth(j-a)
dv/dt
T
a
=25
℃
V
V
AK
=12V, R
L
=100 ohm
T
a
=125
℃
I
T=100mA,
Gate open,
mA
T
a
=25
℃
℃/W
℃/W
V/µ
s
Junction to Case
Junction to Ambient
Linear slope up to V
D
=V
DRM
67%
Gate open
Tj=125
℃
1. Forward current applied for 1 ms maximum duration,duty cycle
≤1%.
2. R
GK
current is not included in measurement
█ Performance
Curves
FIGURE 1 – Gate Characteristics
Max. Allowable Case Temperture (°
c)
FIGURE 2 –Maximum CaseTemperture
Gate Voltage (v)
Gate Current (mA)
Average On-State Current (mA)
HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
