NPN S I L I C O N T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
█
APPLICATIONS
high Voltage power switch switching Application.
HC5039
█
ABSOLUTE MAXIMUM RATINGS（T
a
=25℃）
T
stg
——Storage
Temperature………………………… -65~150℃
T
j
——Junction
Temperature…………………………………150℃
P
C
——Collector
Dissipation Tc=25℃）
（
……………………………70W
V
CBO
——Collector-Base
Voltage………………………………800V
V
CEO
——Collector-Emitter
Voltage……………………………400V
V
E B O
——
Emitter - Base Voltage………………………………7 V
I
C
——Collector
Current（DC）………………………………………5A
I
CP
——Collector
Current
（Pulse）
……………………………………10A
Ib——Base Current
………………………………………………3A
TO-220
1―Base，B
2―Collector，
C
3―Emitter，E
█
ELECTRICAL CHARACTERISTICS（T
a
=25℃）
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
H
FE
Characteristics
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
*DC Current Gain
Min Typ Max Unit
８００
４００
７
１０
１０
１０
１０
１．５
２．０
４０
１
３
Ｖ
Ｖ
Ｖ
Test Conditions
I
C
=1mA,
I
C
=5mA,
I =0
E
I =0
B
I
E
=1mA，I
C
=0
μＡ
V
CB
=500V, I
E
=0
μＡ
V
EB
=7V, I
C
=0
Ｖ
Ｖ
V
CE
=5V, I
C
=0.3A
I
C
=2.5A, I
B
=0.5A
I
C
=2.5A, I
B
=0.5A
V
CE(sat)
*Collector- Emitter Saturation Voltage
V
BE(sat)
*Base-Emitter Saturation Voltage
f
T
Cob
t
ON
t
STG
t
F
Current Gain-Bandwidth Product
Output Capacitance
Turn On Time
Storage
Fall Time
Time
ＭＨ�½�
V
CE
=5V, I
C
=0.1A
�½�Ｆ
V
CB
=10V, f=1ＭＨ�½�
μＳ
μＳ
Vcc=150V，Ic=2.5A，
Ib1=-Ib2=0.5A，R
L
=60Ω
０．８ μＳ
*
Pulse Test：PW≤300μ�½�，Ｄ�½��½��½� �½��½��½��½��½�≤2% Pulse
HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
