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HC4242 参数 Datasheet PDF下载

HC4242图片预览
型号: HC4242
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅晶体管 [NPN SILICON TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 1 页 / 110 K
品牌: HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
   
NPN S I L I C O N T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
HC4242
APPLICATIONS
High Speed Switching
And Power Amplifier.
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
T
stg
——Storage
Temperature………………………… -55~150℃
T
j
——Junction
Temperature…………………………………150℃
P
C
——Collector
Dissipation Tc=25℃)
……………………………40W
V
CBO
——Collector-Base
Voltage………………………………450V
V
CEO
——Collector-Emitter
Voltage……………………………400V
V
EBO
——Emitter-Base
Voltage……………………………………10V
I
C
——Collector
Current………………………………………………7A
Ib——Base Current………………………………………………2A
TO-220
1―Base,B
2―Collector,
C
3―Emitter,E
ELECTRICAL CHARACTERISTICS(T
a
=25℃)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
H
FE(2)
H
FE(3)
V
CE(sat)
V
BE(sat)
Collector- Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Characteristics
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
15
10
10
0.8
1.2
V
V
Min
450
400
10
100
100
55
Typ
Max
Unit
V
V
V
μA
μA
Test Conditions
I
C
=1mA,
I
E
=0
I
B
=0
I
C
=100mA,
I
E
=1mA,I
C
=0
V
CB
=450V, I
E
=0
V
EB
=10V, I
C
=0
V
CE
=5V, I
C
=0.8A
V
CE
=5V, I
C
=2A
V
CE
=5V, I
C
=4A
I
C
=4A, I
B
=0.8A
I
C
=4A, I
B
=0.8A
H
FE(1)
DC Current Gain
h
FE
Classification
A
15—28
B1
22—35
B2
29—42
B3
36—49
B4
43—55