欢迎访问ic37.com |
会员登录 免费注册
发布采购

HC4054 参数 Datasheet PDF下载

HC4054图片预览
型号: HC4054
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅晶体管 [NPN SILICON TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 1 页 / 247 K
品牌: HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
   
Shantou Huashan Electronic Devices Co.,Ltd.
NPN DARLINGTON TRANSISTOR
HC4054
█ APPLICATIONS 
Switching Power .
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
T
stg
——Storage
Temperature…………………………
-65~150℃
T
j
——Junction
Temperature……………………………… 150℃ 
P
C
——Collector
Dissipation(T
c
=25℃)…………………… 30W
V
CBO
——Collector-Base
Voltage………………………… 600V
V
CEO
——Collector-Emitter
Voltage……………………… 450V
V
EBO
——Emitter-Base
Voltage……………………………… 7V
I
C
——Collector
Current……………………………………… 5A
I
B
——Base
Current……………………………………………2A
 
TO-220
1―
Base,B
2―Collector,C
3―Emitter, E
ELECTRICAL CHARACTERISTICS(T
a
=25℃)
Symbol
 
Characteristics
 
Collector-Emitter Sustaining Voltage
Collector Cutoff Current
Emitter-Base Cutoff Current
 
Collector Cutoff Current
Min
 
Typ
 
Max
 
Unit
 
Test Conditions
 
BV
CEO(SUS)
I
CBO
I
EBO
 
I
CEO
H
FE(1)
 
H
FE(2)
V
CE(sat1)
 
V
BE(sat)
 
f
T
t
ON
t
STG
t
F
450 
 
 
 
10 
5 
 
 
 
 
 
 
 
 
 
 
 
 
 
20
 
 
 
 
0.1 
0.1 
0.1 
 
 
1 
1.5 
0.5 
2 
0.2 
V 
�½�A 
�½�A 
�½�A 
 
 
V 
I
C
=100mA, I
B
=0 
V
CB
=600V, I
E
=0
V
EB
=7V, I
C
=0 
V
CE
=450V, I
B
=0
V
CE
=5V, I
C
=2.5A 
V
CE
=5V, I
C
=1mA
I
C
=2.5A, I
B
=0.5A 
DC Current Gain 
Collector- Emitter Saturation Voltage 
Base-Emitter Saturation Voltage 
Current Gain-Bandwidth Product
Turn-On Time
Storage Time
Fall Time
V 
I
C
=2.5mA, I
B
=0.5A 
MHz V
CE
=10V Ic=0.5A,
μS 
μS 
μS 
Ic=2.5A,
I
B1
=0.5A I
B2
=1A
V
BB2
=4V,R
L
=60
Ω