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HC1417 参数 Datasheet PDF下载

HC1417图片预览
型号: HC1417
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅晶体管 [NPN SILICON TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 1 页 / 33 K
品牌: HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
   
NPN S I L I C O N T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
 
APPLICATIONS
High Frequency Amplifier Application
.
HC1417
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
T
stg
——Storage
Temperature………………………… -55~150℃
T
j
——Junction
Temperature…………………………………150℃
P
C
——Collector
Dissipation…………………………………625mW
V
CBO
——Collector-Base
Voltage………………………………20V
V
CEO
——Collector-Emitter
Voltage……………………………15V
V
E B O
——Emitter
-Base Voltage………………………………3V
I
C
——Collector
Current
……………………………………
30mA
TO-92
1―Emitter,E
2―Collector,
C
3―Base,B
ELECTRICAL CHARACTERISTICS(T
a
=25℃)
Symbol
 
Characteristics
 
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Min
 
Typ
 
Max
 
Unit
 
Test Conditions
 
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
H
FE
 
20 
15 
3 
 
 
54 
 
 
100 
 
 
 
 
 
 
 
 
 
 
300 
1.4 
5.5 
 
 
 
0.1 
0.1 
146 
0.5 
1.42 
 
 
 
V 
V 
V 
=100μA,I
=0 
=1�½�A,I
=0 
=100μA,I
=0 
μA  V
CB
=10V, I
=0 
μA  V
EB
=3V, I
=0 
 
V 
V 
�½�F 
�½�B 
CE
=6V, I
=1�½�A 
=10�½�A, I
=1�½�A 
=10�½�A, I
=1�½�A 
CB
=10V,I
=0,�½�=1MH�½� 
CE
=6V,I
=1�½�A,R
=50O 
Emitter
Cut-off Current
DC Current Gain 
V
CE(sat)
 
Collector- Emitter Saturation Voltage 
V
BE(sat)
 
Base-Emitter Saturation Voltage 
f
T
Cob
NF
 
Current Gain-Bandwidth Product
MH�½�  V
CE
=10V, I
=50�½�A 
Output Capacitance
Noise Figure
█ h
FE
Classification
F
54—80 
G
72--108 
H
97--146