Shantou Huashan Electronic Devices Co.,Ltd.
NPN SILICON TRANSISTOR
HBD241C
█
APPLICATIONS
Medium Power Linear And Switching Applicatione.
█
ABSOLUTE MAXIMUM RATINGS（T
a
=25℃）
T
stg
——Storage
Temperature…………………………
-65~150℃
T
j
——Junction
Temperature……………………………… 150℃
P
C
——Collector
Dissipation（T
c
=25℃）…………………… 40W
V
CER
——Collector-Emitter
Voltage……………………… 115V
V
CEO
——Collector-Emitter
Voltage……………………… 100V
V
EBO
——Emitter-Base
Voltage……………………………… 5V
I
C
——Collector
Current DC）
（
…………………………………
3A
I
C
——Collector
Current（Pulse）………………………………5A
I
B
——Base
Current……………………………………………1A
TO-220
1―
Base，B
2―Collector，C
3―Emitter, E
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ELECTRICAL CHARACTERISTICS（T
a
=25℃）
Symbol
Characteristics
Collector-Emitter Sustaining Voltage
Min
Typ
Max
Unit
Test Conditions
BV
CEO(SUS)
I
CEO
I
EBO
I
CES
H
FE（1）
H
FE（2）
V
CE(sat)
V
BE(on)
100
300
1
200
25
10
1.2
1.8
V
nA
mA
μA
I
C
=30mA, I
B
=0
V
CE
=60V, I
B
=0
V
EB
=5V, I
C
=0
V
CE
=100V, V
BE
=0
V
CE
=4V, I
C
=1A
V
CE
=4V, I
C
=3A
Collector Cut-off Current
Emitter-Base Cutoff Current
Collector Cutoff Current
DC Current Gain
Collector- Emitter Saturation Voltage
Base- Emitter On Voltage
V
V
I
C
=3A, I
B
=0.6A
V
CE
=4V,I
C
=3A,
HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
