Shantou Huashan Electronic Devices Co.,Ltd.
PNP SILICON TRANSISTOR
HB857
█ APPLICATIONS
LOW FREQUENCY POWER AMPLIFIER
█
ABSOLUTE MAXIMUM RATINGS（T
a
=25℃）
T
stg
——Storage
Temperature…………………………
－55~150℃
T
j
——Junction
Temperature……………………………… 150℃
P
C
——Collector
Dissipation（T
c
=25℃）…………………… 40W
V
CBO
——Collector-Base
Voltage……………………………-70V
V
CEO
——Collector-Emitter
Voltage………………………… -50V
V
EBO
——Emitter-Base
Voltage……………………………… -5V
I
C
——Collector
Current（DC）……………………………… -4A
TO-220
1―
Base，B
2―Collector，C
3―Emitter, E
█
ELECTRICAL CHARACTERISTICS（T
a
=25℃）
Symbol
Characteristics
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Min
Typ
Max
Unit
Test Conditions
BV
CBO
BV
CEO
BV
EBO
I
CBO
－７０
－５０
－５
６０
３５
１５
－１
Ｖ
Ｖ
Ｖ
I
C
=-10μA, I
E
=0
I
C
=-50mA, I =0
B
I
E
=-10μA，I
C
=0
H
FE（1）
DC Current Gain
H
FE（2）
DC Current Gain
V
CE(sat)
Collector- Emitter Saturation Voltage
V
BE(on)
Base-Emitter On Voltage
f
t
Current Gain-Bandwidth Product
μＡ
V
CB
=-50V, I
E
=0
３２０
V
CE
=-4V, I
C
=-1A
V
CE
=-4V, I
C
=-0.1A
－１
－１
Ｖ
I
C
=-2A, I
B
=-0.2A
Ｖ
V
CE
=-4V, I
C
=-1A
ＭＨ�½�
V
CE
=-4V, I
C
=-0.5A,
█
h
FE
Classification
B
６０—１２０
C
１００—２００
D
１６０—３２０
HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
