P N P S I L I C O N T RAN S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
HA94
█
HIGH VOLTAGE TRANSISTOR
█
ABSOLUTE MAXIMUM RATINGS（T
a
=25℃）
T
stg
——Storage
Temperature………………………… -55~150℃
T
j
——Junction
Temperature…………………………………150℃
P
C
——Collector
Dissipation…………………………………625mW
V
CBO
——Collector-Base
Voltage………………………………-400V
V
CEO
——Collector-Emitter
Voltage……………………………-400V
V
EBO
——Emitter-Base
Voltage………………………………-6V
I
C
——Collector
Current……………………………………-300mA
1―Emitter，E
2―Base，B
3―Collector，
C
TO-92
█
ELECTRICAL CHARACTERISTICS（T
a
=25℃）
Symbol
Characteristics
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter-Base Cut-off Current
Collector Cut-off Current
Min
Typ
Max
Unit
Test Conditions
BV
CBO
BV
CES
BV
EBO
I
CBO
I
EBO
I
CES
H
FE（1）
H
FE（2）
H
FE（3）
H
FE（4）
V
CE(sat1)
V
CE(sat2)
V
BE(sat)
Cob
-400
-400
-6
-100
-100
-1
40
60
45
40
300
V
V
V
nA
nA
μA
I
C
=-100μA, I
E
=0
I
C
=-100μA, V
BE
=0
I
E
=-10μA，I
C
=0
V
CB
=-300V, I
E
=0
V
EB
=-4V, I
C
=0
V
CE
=-400V, V
BE
=0
V
CE
=-10V, I
C
=-1mA
V
CE
=-10V, I
C
=-10mA
V
CE
=-10V, I
C
=-50mA
V
CE
=-10V, I
C
=-100mA
DC Current Gain
Collector- Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
7
-0.5
-0.75
-0.75
V
V
V
pF
I
C
=-10mA, I
B
=-1mA
I
C
=-50mA, I
B
=-5mA
I
C
=-10mA, I
B
=-1mA
V
CB
=20V, I
E
=0，
F=1MHz
HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
