PNP DIGITAL T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
█
APPLICATIONS
Switching Circuit,Interface Circuit.
HA143X
█
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
T
stg
——Storage
Temperature………………………… -55~150℃
T
j
——Junction
Temperature…………………………………150℃
P
C
——Collector
Dissipation…………………………………300mW
V
CBO
——Collector-Base
Voltage………………………………-50V
V
CEO
——Collector-Emitter
Voltage……………………………-50V
V
E B O
——Emitter-Base
Voltage……………………………… -10V
I
C
——Collector
Current………………………………………-100mA
1―Emitter,E
2―Collector,C
3―Base,B
TO-92S
█
ELECTRICAL CHARACTERISTICS(T
a
=25℃)
Symbol
Characteristics
Min
Typ
Max
Unit
Test Conditions
BV
CBO
BV
CEO
I
CBO
I
CEO
I
EBO
H
FE
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
-50
-50
V
V
I
C
=-10μA, I
E
=0
I
C
=-0.1mA, I
B
=0
-0.1 μA
V
CB
=-40V, I
E
=0
-0.5 μA
V
CE
=-40V, I
B
=0
-200 -340 -420 μA
V
EB
=-5V, I
C
=0
30
V
CE
=-5V, I
C
=-10mA
-0.3
3.2
-0.1 -0.3
4.7
250
-2.5
V
V
V
I
C
=-10mA, I
B
=-0.5mA
V
CE
=-5V, I
C
=-0.1mA
V
CE
=-0.3V, I
C
=-20mA
V
CE(sat)
Collector- Emitter Saturation Voltage
V
I
(�½��½��½�)
Input Off Voltage
V
I
(�½��½�)
Input On Voltage
R1
R1/R2
f
T
Input Resistor
Resistance Ratio
Current Gain-Bandwidth Product
6.2 K�½��½��½�
MH�½�
V
CE
=-10V,I
C
=-5mA
0.42 0.47 0.52