Shantou Huashan Electronic Devices Co.,Ltd.
PNP S I L I C O N TRANSISTOR
HA1011
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APPLICATIONS
High Voltage switching，AF Power Amp.
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ABSOLUTE MAXIMUM RATINGS（T
a
=25℃）
T
stg
——Storage
Temperature…………………………
-55~150℃
T
j
——Junction
Temperature……………………………… 150℃
P
C
——Collector
Dissipation（T
c
=25℃）…………………… 25W
V
CBO
——Collector-Base
Voltage………………………… -180V
V
CEO
——Collector-Emitter
Voltage……………………… -160V
V
EBO
——Emitter-Base
Voltage……………………………… -6V
I
C
——Collector
Current
（DC）
………………………………
-1.5A
I
CP
——Collector
Current（Pulse）……………………………-3A
TO-220
1―
Base，B
2―Collector，C
3―Emitter, E
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ELECTRICAL CHARACTERISTICS（T
a
=25℃）
Symbol
Characteristics
Min
Typ
Max
Unit
Test Conditions
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
H
FE
V
CE(sat)
V
BE
Cob
f
T
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter-Base Cutoff Current
-180
-160
-6
-10
-10
60
-0.5
30
100
0.29
0.19
0.48
200
-1.0
-1.5
V
V
V
μA
μA
V
V
pF
MHz
μS
μS
μS
I
C
=-1mA,
I
C
=-1mA,
I
E
=0
I
B
=0
I
E
=-1mA，I
C
=0
V
CB
=-120V, I
E
=0
V
EB
=-4V, I
C
=0
V
CE
=-5V, I
C
=-300mA
I
C
=-500mA, I
B
=-50mA
V
CE
=-5V,I
C
=-10A
V
CB
=-10V, f=1MHz
V
CE
=-10V,I
C
=-50mA
See specified test circuit
DC Current Gain
Collector- Emitter Saturation Voltage
Base- Emitter Voltage
Output Capacitance
Current Gain-Bandwidth Product
Turn-On Time
Fall Time
Storage Time
t
on
t
f
t
stg
█
h
FE
Classification
D
60—120
E
100—200
HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
