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H9018 参数 Datasheet PDF下载

H9018图片预览
型号: H9018
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅晶体管 [NPN SILICON TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 2 页 / 498 K
品牌: HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
 浏览型号H9018的Datasheet PDF文件第2页  
N PN S I L I C O N T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
 
APPLICATIONS
AM/FM AMPLIFIER,LOCAL OSCILLATOR
OF FM/VHF TUNER
H9018
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
T
stg
——Storage
Temperature………………………… -55~150℃
T
j
——Junction
Temperature…………………………………150℃
P
C
——Collector
Dissipation…………………………………400mW
V
CBO
——Collector-Base
Voltage………………………………30V
V
CEO
——Collector-Emitter
Voltage……………………………15V
V
E B O
——Emitter
-Base Voltage………………………………5V
I
C
——Collector
Current
……………………………………
50mA
TO-92
1―Emitter,E
2―Base,B
3―Collector,
C
ELECTRICAL CHARACTERISTICS(T
a
=25℃)
Symbol
 
Characteristics
 
Collector Cut-off Current
Min
 
Typ
 
Max
 
Uni
t
 
Test Conditions
 
I
CBO
H
FE
 
V
CE(sat)
 
BV
CBO
BV
CEO
BV
EBO
Cob
f
T
 
54 
 
30 
15 
5 
 
700 
 
 
 
 
 
 
1.3 
 
0.05  μA 
198 
0.5 
 
 
 
1.7 
 
 
DC Current Gain 
Collector- Emitter Saturation Voltage 
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
CB
=12V, I
=0
V
CE
=5V, I
C
=1mA 
Output Capacitance
Current Gain-Bandwidth Product
I
C
=10mA, I
B
=1mA 
V 
V 
I
C
=100μA, I
E
=0
V 
I
C
=1mA, I
B
=0 
V 
I
E
=100μA,I
C
=0
�½�F 
V
CB
=10V, I
E
=0,f=1MHz
MH�½� 
V
CE
=5V, I
C
=5mA
h
FE
Classification
F
G
 
   72—108  
 
H
    97—146 
I
      132—198 
 
 
   54—80