P NP S I L I C O N T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
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APPLICATIONS
LOW FREQUENCY,LOW NOISE AMPLIFIER
H9015
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ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
T
stg
——Storage
Temperature………………………… -55~150℃
T
j
——Junction
Temperature…………………………………150℃
P
C
——Collector
Dissipation…………………………………450mW
V
CBO
——Collector-Base
Voltage………………………………-50V
V
CEO
——Collector-Emitter
Voltage……………………………-45V
V
E B O
——Emitter-Base
Voltage………………………………-5V
I
C
——Collector
Current……………………………………-100mA
TO-92
1―Emitter,E
2―Base,B
3―Collector,
C
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ELECTRICAL CHARACTERISTICS(T
a
=25℃)
Symbol
Characteristics
Collector Cut-off Current
Min
Typ
Max
Uni
t
Test Conditions
I
CBO
I
EBO
H
FE(1)
V
CE(sat)
V
BE(sat)
BV
CBO
BV
CEO
BV
EBO
Cob
f
T
60
-50
-45
-5
100
4.5
-0.05 μA
-0.05 μA
800
0.7
V
Emitter
Cut-off Current
DC Current Gain
Collector- Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
V
CB
=-30V, I
E
=0
V
EB
=-5V, I
C
=0
V
CE
=-5V, I
C
=-1mA
I
C
=-100mA, I
B
=-5mA
Output Capacitance
Current Gain-Bandwidth Product
I
C
=-100mA, I
B
=-5mA
-1.0 V
V
I
C
=-100μA, I
E
=0
V
I
C
=-1mA, I
B
=0
V
I
E
=-100μA,I
C
=0
��.0 �½�F
V
CB
=-10V, I
E
=0,
f=1MHz
MH�½�
V
CE
=-5V, I
C
=-10mA
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h
FE
Classification
A
60—150
B
100—300
C
D
200—600 400—800