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H9015 参数 Datasheet PDF下载

H9015图片预览
型号: H9015
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅晶体管 [PNP SILICON TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 2 页 / 505 K
品牌: HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
 浏览型号H9015的Datasheet PDF文件第2页  
P NP S I L I C O N T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
 
APPLICATIONS
LOW FREQUENCY,LOW NOISE AMPLIFIER
H9015
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
T
stg
——Storage
Temperature………………………… -55~150℃
T
j
——Junction
Temperature…………………………………150℃
P
C
——Collector
Dissipation…………………………………450mW
V
CBO
——Collector-Base
Voltage………………………………-50V
V
CEO
——Collector-Emitter
Voltage……………………………-45V
V
E B O
——Emitter-Base
Voltage………………………………-5V
I
C
——Collector
Current……………………………………-100mA
TO-92
1―Emitter,E
2―Base,B
3―Collector,
C
ELECTRICAL CHARACTERISTICS(T
a
=25℃)
Symbol
 
Characteristics
 
Collector Cut-off Current
Min
 
Typ
 
Max
 
Uni
t
 
Test Conditions
 
I
CBO
I
EBO
H
FE(1)
 
V
CE(sat)
 
V
BE(sat)
 
BV
CBO
BV
CEO
BV
EBO
Cob
f
T
 
 
60 
 
 
-50 
-45 
-5 
 
100 
 
 
 
 
 
 
 
 
4.5 
 
-0.05  μA 
-0.05  μA 
800 
0.7 
 
V 
Emitter
Cut-off Current
DC Current Gain 
Collector- Emitter Saturation Voltage 
Base-Emitter Saturation Voltage 
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
CB
=-30V, I
=0
V
EB
=-5V, I
C
=0
V
CE
=-5V, I
C
=-1mA 
I
C
=-100mA, I
B
=-5mA 
Output Capacitance
Current Gain-Bandwidth Product
I
C
=-100mA, I
B
=-5mA 
-1.0  V 
 
V 
I
C
=-100μA, I
E
=0
 
V 
I
C
=-1mA, I
B
=0 
 
V 
I
E
=-100μA,I
C
=0
��.0  �½�F 
V
CB
=-10V, I
E
=0,
f=1MHz
 
MH�½� 
V
CE
=-5V, I
C
=-10mA
h
FE
Classification
A
 
 
   60—150  
 
B
  100—300  
 
C
D
200—600        400—800