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H772 参数 Datasheet PDF下载

H772图片预览
型号: H772
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅晶体管 [PNP SILICON TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 3 页 / 751 K
品牌: HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
 浏览型号H772的Datasheet PDF文件第2页浏览型号H772的Datasheet PDF文件第3页  
Shantou Huashan Electronic Devices Co.,Ltd.
P NP S I L I C O N T R A N S I S T O R
H772
█ APPLICATIONS 
Audio Frequency Power Amplifier , Switching Power Amplifier.
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
T
stg
——Storage
Temperature…………………………
-55~150℃
T
j
——Junction
Temperature……………………………… 150℃ 
P
C
——Collector
Dissipation(T
c
=25℃)…………………… 10W
P
C
——Collector
Dissipation(T
A
=25℃)…………………… 1W
V
CBO
——Collector-Base
Voltage………………………… -40V
V
CEO
——Collector-Emitter
Voltage……………………… -30V
V
EBO
——Emitter-Base
Voltage……���…………………… -5V
1―Emitter,E
2―Collector,C
3―Base,B
TO-126ML
 
I
C
——Collector
Current(DC)……………………………-3A
Ib——Base Current
(DC)………………………………-0.6A
ELECTRICAL CHARACTERISTICS(T
a
=25℃)
Symbol 
Parameter 
Collector-Base Cutoff Current
 
Emitter- Base Cutoff Current
Min 
Typ 
Max 
Unit 
Test Conditions 
I
CBO
I
EBO
h
FE
V
CE
sat
V
BE
sat
C
ob
f
T
 
 
 
60 
 
 
 
 
 
 
 
-1 
-1 
400 
μA 
V
CB
=-30V, I
E
=0
μA 
V
EB
=-5V, I
C
=0
 
V 
V 
�½�F���
V
CE
=-2V, I
C
=-1A
I
C
=-2A, I
B
=-0.2A
I
C
=-2A, I
B
=-0.2A
V
CB
=-10V,I
E
=0,f=1MHz
DC Current Gain 
Collector- Emitter Saturation Voltage
Base -Emitter
Saturation
V
oltage
-0.3  -0.5 
-1.0  -2.0 
55 
80 
 
 
Output Capacitance
Current Gain-Bandwidth Product
 
MH�½� 
V
CE
=-5V,I
E
=-0.1A
 
█ h
FE
Classification
R 
 
 
60—120
 
 
 
O   
 
 
 
Y   
 
 
 
G 
100—200
160—320
200—400