PNP S I L I C O N T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
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APPLICATIONS
Low frequency power amplifier
H643
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ABSOLUTE MAXIMUM RATINGS（T
a
=25℃）
T
stg
——Storage
Temperature………………………… -55~150℃
T
j
——Junction
Temperature…………………………………150℃
P
C
——Collector
Dissipation…………………………………500mW
V
CBO
——Collector-Base
Voltage………………………………-40V
V
CEO
——Collector-Emitter
Voltage……………………………-20V
V
E B O
——Emitter-Base
Voltage………………………………-5V
I
C
——Collector
Current……………………………………-500mA
TO-92
1―Emitter，E
2―Base，B
3―Collector，
C
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ELECTRICAL CHARACTERISTICS（T
a
=25℃）
Symbol
Characteristics
Min
Typ
Max
Unit
Test Conditions
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
H
FE
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
－４０
－２０
－５
４０
Ｖ
Ｖ
Ｖ
I
C
=-100μA, I
E
=0
I
C
=-10mA, I
B
=0
I
E
=-10μA，I
C
=0
－２００ �½�Ａ
V
CB
=-25V, I
E
=0
－２００ �½�Ａ
V
EB
=-3V, I
C
=0
４００
V
CE
=-1V, I
C
=-100mA
Ｖ
Ｖ
I
C
=-500mA, I
B
=-50mA
I
C
=-500mA, I
B
=-50mA
V
CE(sat)
Collector- Emitter Saturation Voltage
V
BE(sat)
Base-Emitter Saturation Voltage
－０．３ －０．４
－１．０ －１．３
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h
FE
Classification
R
40— 80
O
70— 140
Y
120— 240
G
200—400
HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
