NPN S I L I C O N T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
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APPLICATIONS
Low Frequency Power Amplifier.
H400S
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ABSOLUTE MAXIMUM RATINGS（T
a
=25℃）
T
stg
——Storage
Temperature………………………… -55~150℃
T
j
——Junction
Temperature…………………………………150℃
P
C
——Collector
Dissipation…………………………………900mW
V
CBO
——Collector-Base
Voltage………………………………25V
V
CEO
——Collector-Emitter
Voltage……………………………25V
V
E B O
——Emitter
-Base Voltage………………………………5V
I
C
——
Collector Current…………………………………… 1 A
TO-92
1―Emitter，E
2―Collector，
C
3―Base，B
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ELECTRICAL CHARACTERISTICS（T
a
=25℃）
Symbol
Characteristics
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Min
Typ
Max
Unit
Test Conditions
BV
CBO
BV
CEO
BV
EBO
２５
２５
５
６０
３０
５６０
Ｖ
Ｖ
Ｖ
Ｖ
Ｖ
I
C
=10μA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=10μA，I
C
=0
V
CE
=2V, I
C
=50mA
V
CE
=2V, I
C
=1A
I
C
=0.5A, I
B
=50mA
I
C
=0.5A, I
B
=50mA
H
FE（1）
DC Current Gain
H
FE（2）
DC Current Gain
V
CE(sat)
Collector- Emitter Saturation Voltage
V
BE(sat)
Base-Emitter Saturation Voltage
I
CBO
I
EBO
I
CEO
f
T
Cob
Collector Cut-off Current
０．１ ０．３
０．８５ １．２
１８０
１５
１
１
１
Emitter
Cut-off Current
Collector Cut-off Current
Current Gain-Bandwidth Product
μＡ
V
CB
=20V, I
E
=0
μＡ
V
EB
=4V, I
C
=0
μＡ
V
CE
=20V, I
B
=0
ＭＨ�½�
V
CE
=10V, I
C
=50mA
�½�Ｆ
V
CB
=10V, I
E
=0，f=1ＭＨ�½�
Output Capacitance
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h
FE
Classification
D
E
１００—２００
F
１６０—３２０
G
２８０—５６０
６０—１２０
HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
