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H3619 参数 Datasheet PDF下载

H3619图片预览
型号: H3619
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅晶体管 [NPN SILICON TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 1 页 / 107 K
品牌: HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
   
Shantou Huashan Electronic Devices Co.,Ltd.
NPN S I L I C O N T RA N S I S T O R
H3619
APPLICATIONS
High Voltage switching And amplifier.
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
T
stg
——Storage
Temperature…………………………
-55~150℃
T
j
——Junction
Temperature……………………………… 150℃
P
C
——Collector
Dissipation
c
=25℃)
(T
……………………
1.5W
V
CBO
——Collector-Base
Voltage………………………… 300V
V
CEO
——Collector-Emitter
Voltage……………………… 300V
V
EBO
——Emitter-Base
Voltage……………………………… 7V
I
C
——Collector
Current……………………………………100mA
Ib——Base Current…��……………………………………50mA
1―Emitter,E
2―Collector,C
3―Base,B
TO-126ML
ELECTRICAL CHARACTERISTICS(T
a
=25℃)
Symbol
Characteristics
Collector Cut-off Current
Min
Typ
Max
Unit
Test Conditions
I
CBO
I
EBO
1.0
1.0
20
30
200
1.0
1.0
50
30
μA
μA
V
CB
=240V, I
E
=0
V
EB
=7V, I
C
=0
V
CE
=10V, I
C
=4mA
V
CE
=10V, I
C
=20mA
Emitter Cut-off Current
H
FE(1)
DC Current Gain
H
FE(2)
DC Current Gain
V
CE(sat)
Collector- Emitter Saturation Voltage
V
BE(sat)
Base-Emitter Saturation Voltage
f
t
Cob
Current Gain-Bandwidth Product
V
V
MHz
pF
I
C
=10mA, I
B
=1mA
I
C
=10mA, I
B
=1mA
V
CE
=10V, I
C
=20mA,
V
CB
=20V, I
E
=0,f=1MHz
Output Capacitance