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H3200 参数 Datasheet PDF下载

H3200图片预览
型号: H3200
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅晶体管 [NPN SILICON TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 2 页 / 523 K
品牌: HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
 浏览型号H3200的Datasheet PDF文件第2页  
NPN S I L I C O N T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
 
APPLICATIONS
Low Noise Audio Amplifier Application
.
H3200
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
T
stg
——Storage
Temperature………………………… -55~150℃
T
j
——Junction
Temperature…………………………………150℃
P
C
——Collector
Dissipation…………………………………300mW
V
CBO
——Collector-Base
Voltage………………………………120V
V
CEO
——Collector-Emitter
Voltage……………………………120V
V
E B O
——Emitter
-Base Voltage………………………………5V
I
C
——Collector
Current………………………………………100mA
TO-92
1―Emitter,E
2―Collector,
C
3―Base,B
ELECTRICAL CHARACTERISTICS(T
a
=25℃)
Symbol
 
Characteristics
 
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Min
 
Typ
 
Max
 
Unit
 
Test Conditions
 
BV
CEO
I
CBO
I
EBO
H
FE
 
V
BE(ON)
f
T
Cob
NF
NF
NF
120 
 
 
200 
 
 
 
 
 
 
 
 
 
 
 
 
0.65 
100 
3.0 
 
 
3 
 
100 
100 
700 
0.3 
 
 
 
6 
2 
 
V 
I
C
=1mA, I
B
=0 
Emitter
Cut-off Current
DC Current Gain 
Base-Emitter On Voltage
Current Gain-Bandwidth Product
�½�A 
V
CB
=120V, I
E
=0
�½�A 
V
EB
=5V, I
C
=0
 
V 
V
CE
=6V, I
C
=2mA 
I
C
=10mA, I
B
=1mA
 
V
CE(sat)
 
Collector- Emitter Saturation V
oltage 
Output Capacitance
Noise Figure
V 
V
CE
=6V, I
C
=2mA
MH�½� 
V
CE
=6V, I
C
=1mA
�½�F 
V
CB
=10V, I
E
=0,f=1MH�½�
V =6V, I
C
=100μA
�½�B 
CE
f=10KHz,Rg=10KΩ
V =6V, I
C
=100μA
�½�B 
CE
f=1KHz,Rg=10KΩ
V =6V, I
C
=100μA
�½�B 
CE
f=1KHz,Rg=100KΩ
h
FE
Classification
GR
 
 
           200—400   
BL
           350—700