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H2717 参数 Datasheet PDF下载

H2717图片预览
型号: H2717
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅晶体管 [NPN SILICON TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 3 页 / 180 K
品牌: HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
 浏览型号H2717的Datasheet PDF文件第2页浏览型号H2717的Datasheet PDF文件第3页  
N P N S I L I C O N T RAN S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
H2717
APPLICATIONS
TV FINAL PICTURE IF AMPLIFIER APPLICATIONS.
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
T
stg
——Storage
Temperature………………………… -55~150℃
T
j
——Juncttion
Temperature…………………………………150℃
P
C
——Collector
Dissipation…………………………………300mW
V
CBO
——Collector-Base
Voltage………………………………30V
V
CEO
——Collector-Emitter
Voltage……………………………25V
V
EB O
——Emitter-Base
Voltage………………………………4V
I
C
——Collector
Current…………………………………………50mA
Ie——Emitter Current…………………………………………-50mA
1―Base,B
2―Emitter,E
3―Collector,
C
TO-92
ELECTRICAL CHARACTERISTICS(T
a
=25℃)
Symbol
Characteristics
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter- Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Base- Emitter Saturation Voltage
Output Capacacitance
Current Gain-Bandwidth Product
Power Gain(Fig)
Min
Typ
Max
Unit
Test Conditions
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
H
FE
V
BE(sat)
Cob
f
T
Gpe
30
25
4
0.1
0.1
40
240
0.2
1.5
0.8
300
28
36
2.0
V
V
V
μA
μA
V
V
pF
MHz
dB
I
C
=100μA,I
E
=0
I
C
=10mA,I
B
=0
I
E
=100μA,I
C
=0
V
CB
=30V, I
E
=0
V
EB
=3V, I
C
=0
V
CE
=12.5V, I
C
=12.5mA
I
C
=15mA, I
B
=1.5mA
I
C
=15mA,I
B
=1.5mA
V
CB
=10V,I
E
=0,f=30MHz
V
CE
=12.5V, I
C
=12.5mA
Vcc=12.5V, I
E
=-12.5mA,
f=45MHz
V
CE(sat)
Collector- Emitter Saturation Voltage