NPN S I L I C O N T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
H227
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APPLICATIONS
Low frequency power amplifier.
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ABSOLUTE MAXIMUM RATINGS（T
a
=25℃）
T
stg
——Storage
Temperature………………………… -55~150℃
T
j
——Junction
Temperature…………………………………150℃
P
C
——Collector
Dissipation…………………………………400mW
V
CBO
——Collector-Base
Voltage………………………………30V
V
CEO
——Collector-Emitter
Voltage……………………………25V
V
EB O
——Emitter-Base
Voltage………………………………5V
I
C
——Collector
Current……………………………………300mA
TO-92
1―Emitter，E
2―Base，B
3―Collector，
C
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ELECTRICAL CHARACTERISTICS（T
a
=25℃）
Symbol
Characteristics
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Min
Typ
Max
Unit
Test Conditions
BV
CBO
BV
CEO
BV
EBO
H
FE
V
CE(sat)
I
CBO
I
EBO
30
25
5
70
0.14
400
0.4
100
100
V
V
V
I
C
=100μA, I
E
=0
I
C
=10mA, I
B
=0
I
E
=10μA，I
C
=0
V
CE
=1V, I
C
=50mA
I
C
=300mA, I
B
=30mA
V
CB
=25V, I
E
=0
V
EB
=3V, I
C
=0
DC Current Gain
Collector- Emitter Saturation Voltage
Collector Cut-off Current
V
nA
nA
Emitter
Cut-off Current
█
h
FE
Classification
O
70—140
Y
120—240
G
200—400
HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
