NPN S I L I C O N T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
H2274
█
APPLICATIONS
Low frequency power amplifier Applications.
█ABSOLUTE
MAXIMUM RATINGS（T
a
=25℃）
T
stg
——Storage
Temperature………………………… -55~150℃
T
j
——Junction
Temperature…………………………………150℃
P
C
——Collector
Dissipation…………………………………600mW
V
CBO
——Collector-Base
Voltage………………………………60V
V
CEO
——Collector-Emitter
Voltage……………………………50V
V
EB O
——Emitter-Base
Voltage………………………………5V
I
C
——Collector
Current………………………………………500mA
（
………………………………800mA
I
CP
——Collector
Current Pulse）
TO-92
1―Emitter，E
2―Collector，
C
3―Base，B
█
ELECTRICAL CHARACTERISTICS（T
a
=25℃）
Symbol
Characteristics
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Min
Typ
Max
Unit
Test Conditions
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
H
FE(1)
H
FE(2)
V
CE(sat)
V
BE(sat)
f
T
Cob
60
50
5
1.0
1.0
60
35
0.2
0.9
120
5
320
0.6
1.2
V
V
V
μA
μA
I
C
=10μA, I
E
=0
I
C
=1mA,
I
B
=0
I
E
=10μA，I
C
=0
V
CB
=40V, I
E
=0
V
EB
=4V, I
C
=0
V
CE
=5V, I
C
=50mA
V
CE
=5V, I
C
=400mA
Emitter
Cut-off Current
DC Current Gain
Collector- Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain-Bandwidth Product
V
V
MHz
pF
I
C
=400mA, I
B
=40mA
I
C
=400mA, I
B
=40mA
V
CE
=10V, I
C
=10mA
V
CB
=10V, f=1MHz
Output Capacitance
█
h
FE
Classification
D
60—120
E
120—200
F
160—320
HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
