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H1302 参数 Datasheet PDF下载

H1302图片预览
型号: H1302
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅晶体管 [NPN SILICON TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 1 页 / 104 K
品牌: HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
   
NPN S I L I C O N T R A N S I S T O
Shantou Huashan Electronic Devices Co.,Ltd.
H1302
AUDIO MUTING APPLICATION.
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
T
stg
——Storage
Temperature………………………… -55~150℃
T
j
——Junction
Temperature…………………………………150℃
P
C
——Collector
Dissipation…………………………………400mW
V
CBO
——Collector-Base
Voltage………………………………25V
V
CEO
——Collector-Emitter
Voltage……………………………20V
V
EBO
——Emitter-Base
Voltage………………………………12V
I
C
——Collector
Current……………………………………300mA
I
C
——Collector
Current……………………………………300mA
I
B
——Base
Current……………………………………………30mA
1―Emitter,E
2―Collector,
C
3―Base,B
TO-92
ELECTRICAL CHARACTERISTICS(T
a
=25℃)
Symbol
Characteristics
Collector Cut-off Current
Min
Typ
Max
Unit
Test Conditions
I
CBO
I
EBO
H
FE
V
CE(sat)
V
BE(sat)
f
T
Cob
100
100
200
800
0.25
1.0
60
10
nA
nA
V
V
pF
V
CB
=25V, I
E
=0
V
EB
=12V, I
C
=0
V
CE
=2V, I
C
=4mA
I
C
=100mA, I
B
=10mA
I
C
=100mA, I
B
=10mA
V
CB
=10V, I
E
=0,f=1MHz
Emitter
Cut-off Current
DC Current Gain
Collector- Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain-Bandwidth Product
MHz
V
CE
=10V, I
C
=1mA
Output Capacitance
h
FE
Classification
A
200—350
B
300—500
C
400—800