MMBTA05
TRANSISTOR(NPN)
SOT-23
FEATURES
Driver transistor
MARKING :1H
MAXIMUM RATINGS (T
A
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
60
60
4
0.5
300
150
-55-150
Units
V
V
V
A
mW
℃
℃
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Collector cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE1
DC current gain
h
FE2
Collector-emitter saturation voltage
Base-emitter
voltage
V
CE
(sat)
V
BE
f
T
V
CE
=1V, I
C
= 100mA
I
C
=100mA, I
B
=10mA
V
CE
=1V, I
C
= 100mA
V
CE
= 2V, I
C
=10mA
100
100
0.25
1.2
V
V
MHz
Test
conditions
MIN
60
60
4
0.1
0.1
0.1
100
400
TYP
MAX
UNIT
V
V
V
I
C
= 100
μ
A, I
E
=0
I
C
= 1mA, I
B
=0
I
E
=100
μ
A, I
C
=0
V
CB
=60V, I
E
=0
V
CE
=60V, I
B
=0
V
EB
=3V, I
C
=0
V
CE
=1V, I
C
= 10mA
μ
A
μ
A
μ
A
Transition frequency
f=
100MHz
１
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semiconductor
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