MMBTA64
TRANSISTOR(PNP)
SOT–23
FEATURES
For Applications Requiring High Current Gain
MARKING:2V
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
ΘJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-30
-30
-10
-800
300
416
150
-55�½�+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
h
FE(2)
*
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.
V
CE(sat)
*
V
BE
*
f
T
V
CE
=-5V, I
C
=-100mA
I
C
=-100mA, I
B
=-0.1mA
V
CE
=-5V, I
C
=-100mA
V
CE
=-5V,I
C
=-10mA,
f=100MHz
125
20
-1.5
-2
K
V
V
MHz
Symbol
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
*
Test
conditions
Min
-30
-10
-0.1
-0.1
10
Typ
Max
Unit
V
V
µA
µA
K
I
C
=-100µA, I
E
=0
I
E
=-100µA, I
C
=0
V
CB
=-30V, I
E
=0
V
EB
=-10V, I
C
=0
V
CE
=-5V, I
C
=-10mA
１
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semiconductor
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