MMBT5551
TRANSISTOR(NPN)
FEATURES
Complementary to MMBT5401
Ideal for Medium Power Amplification and Switching
MARKING: G1
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
ΘJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
180
160
6
600
300
416
150
-55�½�+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
1. BASE
2. EMITTER
3. COLLECTOR
SOT–23
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Symbol
V
(BR)CBO
V
(BR)CEO
I
CBO
I
EBO
h
FE(1) *
h
FE(2)
h
FE(3)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
*Pulse test: pulse width
≤300μs,
duty cycle≤ 2.0%.
*
*
*
Test
I
C
=1mA, I
B
=0
I
E
=10µA, I
C
=0
conditions
Min
180
160
6
Typ
Max
Unit
V
V
V
I
C
=100µA, I
E
=0
V
(BR)EBO
V
CB
=120V, I
E
=0
V
EB
=4V, I
C
=0
V
CE
=5V, I
C
=1mA
V
CE
=5V, I
C
=10mA
V
CE
=5V, I
C
=50mA
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
V
CE
=10V,I
C
=10mA, f=100MHz
V
CB
=10V, I
E
=0, f=1MHz
100
*
50
50
80
100
50
0.15
0.2
1
1
300
6
300
nA
nA
V
CE(sat)1*
V
CE(sat)2
V
BE(sat)1
V
BE(sat)2
f
T
C
ob
*
*
V
V
V
V
MHz
pF
CLASSIFICATION OF
h
FE (2)
RANK
RANGE
L
100-200
H
200-300
１
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semiconductor
www.htsemi.com
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