MMBT4403
TRANSISTOR (PNP)
FEATURES
Switching transistor
MARKING
：MMBT4403=2T
MAXIMUM RATINGS (T
A
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-40
-40
-5
-0.6
0.3
150
-55-150
Units
V
V
V
A
W
℃
℃
1.
BASE
2.
EMITTER
3.
COLLECTOR
SOT-23
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
Test
conditions
MIN
-40
-40
-5
-0.1
-0.1
-0.1
100
300
-0.4
-0.95
200
V
V
MHz
MAX
UNIT
V
V
V
μA
μA
μA
I
C
=-100μA , I
E
=0
I
C
= -1mA , I
B
=0
I
E
=-100μA, I
C
=0
V
CB
=-35V, I
E
=0
V
CE
=-35 V, I
B
=0
V
EB
=-4V,I
C
=0
V
CE
=-2V, I
C
= -150mA
I
C
=-150mA, I
B
=-15mA
I
C
=- 150mA, I
B
=-15mA
V
CE
= -10V, I
C
= -20mA
f
T
f =
100MHz
１
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semiconductor
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