MMBT3906
-100
Static Characteristic
-500uA
-450uA
-400uA
-350uA
COMMON
EMITTER
Ta=25
℃
300
h
FE
——
I
C
COMMON EMITTER
VCE=-1V
COLLECTOR CURRENT I
C
(mA)
Ta=100
℃
-80
DC CURRENT GAIN h
FE
200
-60
-300uA
-250uA
Ta=25
℃
-40
-200uA
-150uA
100
-20
-100uA
I
B
=-50uA
-0
-0
-4
-8
-12
-16
-20
0
-0.1
-0.3
-1
-3
-10
-30
-100
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
-500
V
CEsat
——
I
C
-1.2
V
BEsat
——
I
C
-300
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(mV)
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(V)
Ta=25
℃
-0.8
Ta=100
℃
-100
Ta=25
℃
Ta=100
℃
-0.4
-30
β=10
-10
-1
-3
-10
-30
-100
-200
-0.0
-1
-3
-10
-30
-100
β=10
-300
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
-100
I
C
COMMON EMITTER
VCE=-1V
——
V
BE
9
C
ob
/ C
ib
——
V
CB
/ V
EB
f=1MHz
I
E
=0/ I
C
=0
Ta=25
℃
COLLECTOR CURRENT I
C
(mA)
-30
Cob
-10
CAPACITANCE C (pF)
Ta=100
℃
Cib
3
-3
Ta=25
℃
-1
-0.3
-0.1
-0.0
-0.2
-0.4
-0.6
-0.8
-1.0
1
-0.1
-0.3
-1
-3
-10
-20
BASE-EMMITER VOLTAGE V
BE
(V)
REVERSE VOLTAGE
V
(V)
600
f
T
——
I
C
VCE=-20V
o
Ta=25 C
300
Pc
——
Ta
TRANSITION FREQUENCY f
T
(MHz)
COLLECTOR POWER DISSIPATION
Pc (mW)
-1
-10
250
400
200
150
100
50
200
-3
-30
-50
0
0
25
50
75
100
125
150
COLLECTOR CURRENT
I
C
(mA)
AMBIENT TEMPERATURE
Ta
(
℃
)
2
JinYu
semiconductor
www.htsemi.com
D�½��½��½�:2011/05