KTD1304
TRANSISTOR (NPN)
FEATURES
·High
emitter-base voltage
·low
on resistance
MARKING: MAX
MAXIMUM RATINGS (T
A
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
25
20
12
0.3
0.2
150
-55-150
Units
V
V
V
A
W
℃
℃
SOT-23
1. BASE
2. EMITTER
3.COLLECTOR
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
(FOR)
DC current gain
h
FE
(REV)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
output capacitance
On resistance
V
CE
(sat)
V
BE
(sat)
V
CE
= 2V, I
C
= 4mA
I
C
= 100mA, I
B
=10 mA
I
C
= 100mA, I
B
=10mA
V
CE
=10V, I
C
= 1mA
60
10
0.6
20
0.25
1
V
V
MHz
Test
conditions
I
E
=0
MIN
25
20
12
0.1
0.1
200
1000
TYP
MAX
UNIT
V
V
V
I
C
=100
μ
A,
I
C
=1mA, I
B
=0
I
E
=100
μ
A, I
C
=0
V
CB
=25 V, I
E
=0
V
EB
=12V, I
C
=0
V
CE
=2V, I
C
=4 mA
μ
A
μ
A
f
T
f=
100MHz
V
CB
=10V,I
E
=0,f=1MHz
V
in
=0.3V,I
B
=1mA,f=1KH
Z
C
ob
R
(on)
pF
Ω
１
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semiconductor
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