KTC3879
TRANSISTOR (NPN)
FEATURES
High Power Gain
APPLICATIONS
High Frequency Application
HF,VHF Band Amplifier Application
1. BASE
2. EMITTER
SOT–23
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
ΘJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
35
30
4
50
150
833
150
-55½+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
Test
conditions
Min
35
30
4
0.1
0.2
1
40
240
0.4
1
100
V
V
MHz
Typ
Max
Unit
V
V
V
µA
µA
µA
I
C
=100µA, I
E
=0
I
C
=100µA, I
B
=0
I
E
=100µA, I
C
=0
V
CB
=30V, I
E
=0
V
CE
=25V, I
B
=0
V
EB
=4V, I
C
=0
V
CE
=12V, I
C
=2mA
I
C
=10mA, I
B
=1mA
I
C
=10m A, I
B
=1mA
V
CE
=10V,I
C
=1mA
CLASSIFICATION OF
h
FE
RANK
RANGE
MARKING
R
40–80
RR
O
70–140
RO
Y
120–240
RY
１
JinYu
semiconductor
www.htsemi.com
Ｄ½½½：２０１１／０５
HTSEMI [ SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. ]
