KTA1668
TRANSISTOR (PNP)
FEATURES
High voltage: V
CEO
=-60V
High transistors frequency
MAXIMUM RATINGS (T
A
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector power dissipation
Junction Temperature
Storage Temperature
Value
-80
-60
-5
-1
500
150
-55-150
Units
V
V
V
A
mW
℃
℃
SOT-89
1.
BASE
2.
COLLECTOR
3.
EMITTER
1
2
3
ELECTRICAL CHARACTERISTICS (Tamb=25
℃
unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE1
h
FE2
V
CE(sat)
V
B E(sat)
f
T
C
ob
Test
conditions
MIN
-80
-60
-5
-0.1
-0.1
60
30
-0.7
-1.2
150
12
V
V
MHz
pF
200
TYP
MAX
UNIT
V
V
V
μA
μA
I
C
=-0.1mA,I
E
=0
I
C
=-1mA,I
B
=0
I
E
=-0.1mA,I
C
=0
V
CB
=-50V,I
E
=0
V
EB
=-4V,I
C
=0
V
CE
=-2V,I
C
=-50mA
V
CE
=-2V,I
C
=-1A
I
C
=-500mA,I
B
=-50mA
I
C
=-500mA,I
B
=-50mA
V
CE
=-10V,I
C
=-50mA, f=100MHz
V
CB
=-10V,I
E
=0,f=1MHz
CLASSIFICATION OF
Rank
Range
Marking
h
FE
O
60-120
JO
Y
100-200
JY
１
JinYu
semiconductor
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