KTA1298
TRANSISTOR (PNP)
SOT-23
FEATURES
Low frequency power amplifier application
Power switching application
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (T
A
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C*
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current –Continuous
Collector Dissipation
Junction Temperature
Storage Temperature
Value
-35
-30
-5
-0.8
200
150
-55-150
Units
V
V
V
A
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off
Emitter
cut-off
current
current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
DC current
gain
h
FE(2)
Collector-emitter saturation voltage
Base- emitter voltage
Transition
frequency
V
CE
(sat)
V
BE
f
T
C
ob
V
CE
=-1V, I
C
=-800mA
I
C
=-500mA, I
B
= -20mA
V
CE
=-1V, I
C
=-10mA
V
CE
=-5V, I
C
=-10mA,
V
CB
=-10V, I
E
=0,f=1MHz
-0.5
120
13
40
-0.4
-0.8
V
V
MHz
pF
Test
conditions
MIN
-35
-30
-5
-0.1
-0.1
100
320
TYP
MAX
UNIT
V
V
V
μA
μA
I
C
=- 1mA,I
E
=0
I
C
= -10mA, I
B
=0
I
E
=-1mA, I
C
=0
V
CB
=-30 V,I
E
=0
V
EB
= -5V,I
C
=0
V
CE
=-1V, I
C
=-100mA
Collector output capacitance
CLASSIFICATION OF h
FE(1)
Rank
Range
MARKING
O
100-200
IO
Y
160-320
IY
１
JinYu
semiconductor
www.htsemi.com
Ｄ�½��½��½�：２０１１／０５
HTSEMI [ SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. ]
