FMMT493
TRANSISTOR (NPN)
SOT–23
FEATURES
Complementary Type FMMT593
MARKING:493
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
ΘJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
120
100
5
1000
250
500
150
-55�½�+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CES
I
EBO
h
FE(1)
*
h
FE(2)
*
DC current gain
h
FE(3)
*
h
FE(4)
*
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
V
CE(sat)1
*
V
CE(sat)2
*
V
BE(sat)
*
V
BE
*
f
T
C
ob
Test
conditions
Min
120
100
5
0.1
0.1
0.1
100
100
60
20
0.3
0.6
1.15
1
150
10
V
V
V
V
MHz
pF
300
Typ
Max
Unit
V
V
V
µA
µA
µA
I
C
=100µA, I
E
=0
I
C
=10mA, I
B
=0
I
E
=100µA, I
C
=0
V
CB
=100V, I
E
=0
V
CES
=100V, I
E
=0
V
EB
=4V, I
C
=0
V
CE
=10V, I
C
=1mA
V
CE
=10V, I
C
=250mA
V
CE
=10V, I
C
=0.5A
V
CE
=10V, I
C
=1A
I
C
=500mA, I
B
=50mA
I
C
=1A, I
B
=100mA
I
C
=1A, I
B
=100mA
V
CE
=10V, I
C
=1A
V
CE
=10V,I
C
=50mA, f=100MHz
V
CB
=10V, I
E
=0, f=1MHz
*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.
１
JinYu
semiconductor
www.htsemi.com
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