EMH9
digital transistor (NPN+ NPN)
SOT-563
FEATURES
Two DTC114Ys chips in a package.
Transistor elements are independent, eliminating interference.
Mounting cost and area can be cut in half.
External circuit
1
MARKING：H9
Absolute maximum ratings(Ta=25℃)
Parameter
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
Symbol
V
CC
V
IN
I
O
I
C(MAX)
Pd
Tj
Tstg
Limits
50
-6~40
70
100
150(TOTAL)
150
-55~150
Unit
V
V
mA
mW
℃
℃
Conditions
V
CC
=5V ,I
O
=100µA
V
O
=0.3V ,I
O
=1 mA
I
O
/I
I
=5mA/0.25mA
V
I
=5V
V
CC
=50V, V
I
=0
V
O
=5V ,I
O
=5mA
Electrical characteristics (Ta=25℃)
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
Symbol
V
I(off)
V
I(on)
V
O(on)
I
I
I
O(off)
G
I
R
1
R
2
/R
1
f
T
68
7
3.7
10
4.7
250
13
5.7
MHz
V
CE
=10V ,I
E
=-5mA,f=100MHz
KΩ
1.4
0.3
0.88
0.5
Min.
Typ
Max.
0.3
Unit
V
V
mA
μA
1
JinYu
semiconductor
www.htsemi.com
Date:2011/ 05
HTSEMI [ SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. ]
