EMF24
Power management (dual transistors)
FEATURES
2SC4617 and DTC114E are housed independently in a package.
Power management circuit
Power switching circuit in a single package
Mounting cost and area can be cut in half
SOT-563
1
MARKING: F24
TR1 MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
60
50
7
150
150
150
-55-150
Units
V
V
V
mA
mW
℃
℃
TR1 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
Test
conditions
M
in
60
50
7
0.1
0.1
180
390
0.4
180
3.5
V
MHz
pF
T
yp
Max
Unit
V
V
V
μA
μA
I
C
=50μA,I
E
=0
I
C
=1mA,I
B
=0
I
E
=50μA,I
C
=0
V
CB
=60V,I
E
=0
V
EB
=7V,I
C
=0
V
CE
=6V,I
C
=1mA
I
C
=50mA,I
B
=5mA
V
CE
=12V,I
C
=2mA,f=100MHz
V
CB
=12V,I
E
=0,f=1MHz
1
JinYu
semiconductor
www.htsemi.com
Date:2011/ 05
HTSEMI [ SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. ]
