EMD3
DIGITAL TRANSISTOR (NPN+ PNP)
FEATURES
DTA114E and DTC114E transistors are built-in a package.
Transistor elements are independent, eliminating interference.
Mounting cost and area can be cut in half.
External circuit
SOT-563
1
MARKING: D3
Absolute maximum ratings(Ta=25
℃
)
Parameter
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
Symbol
V
CC
V
IN
I
O
I
C(MAX)
Pd
Tj
Tstg
Symbol
V
I(off)
V
I(on)
V
O(on)
I
I
I
O(off)
G
I
R
1
R
2
/R
1
f
T
30
7
0.8
10
1
250
13
1.2
MHz
V
CE
=10V ,I
E
=-5mA,f=100MHz
KΩ
3
0.3
0.88
0.5
Min.
Typ
Limits
50
-10~40
50
100
150(TOTAL)
150
-55~150
Max.
0.5
Unit
V
V
mA
μA
Conditions
V
CC
=5V,I
O
=100µA
V
O
=0.3V ,I
O
=10mA
I
O
/I
I
=10mA/0.5mA
V
I
=5V
V
CC
=50V, V
I
=0
V
O
=5V,I
O
=5mA
Unit
V
V
mA
mW
Electrical characteristics (Ta=25
℃
)
1
JinYu
semiconductor
www.htsemi.com
Date:2011/ 05