DTA114TE/DTA114TUA/DTA114TKA/DTA114TSA/DTA114TCA
MAXIMUM RATINGS* TA=25℃ unless otherwise noted
Symbol
Parameter
LIMITS(DTA114T□)
Units
E
UA
KA
-50
CA
SA
VCBO
VCEO
VEBO
IC
V
V
Collector-Base Voltage
-50
Collector-Emitter Voltage
Emitter-Base Voltage
-5
V
Collector Current -Continuous
Collector Dissipation
-100
200
mA
mW
℃
PC
150
300
TJ, Tstg
Junction and Storage Temperature
-55~+150
ELECTRICAL CHARACTERISTICS (Tamb=25℃
unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
-50
V
Ic=-50µA,IE=0
Ic=-1mA,IB=0
Collector-emitter
voltage
breakdown
V(BR)CEO
-50
-5
V
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
V(BR)EBO
ICBO
IEBO
V
IE=-50µA,IC=0
VCB=-50V,IE=0
-0.5
-0.5
600
-0.3
uA
uA
VEB=-4V,IC=0
hFE
100
7
250
VCE=-5V,IC=-1mA
Collector-emitter saturation voltage
Transition frequency
VCE(sat)
fT
IC=-10mA,IB=-1mA
VCE=-10V,IC=-5mA, f=100MHz
V
250
10
MHz
kΩ
Imput resistor
R1
13
Typical Characteristics
2
JinYu
semiconductor
www.htsemi.com
Date:2011/05
HTSEMI [ SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. ]
