CXT5551
TRANSISTOR (NPN)
SOT-89
FEATURES
Switching and amplification in high voltage
Applications such as telephony
Low current(max. 600mA)
High voltage(max.180v)
Marking: 1G6
1. BASE
2. COLLECTOR
3. EMITTER
1
MAXIMUM RATINGS (T
A
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
180
160
6
0.6
0.5
150
-65-150
Units
V
V
V
A
W
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
DC current gain
h
FE(2)
h
FE(3)
Collector-emitter saturation voltage
V
CE(sat)
V
CE(sat)
V
BE(sat)
V
BE(sat)
f
T
C
ob
NF
Test
conditions
MIN
180
160
6
50
50
80
80
30
0.15
0.2
1
1
100
6
8
V
V
V
V
MHz
pF
dB
300
TYP
MAX
UNIT
V
V
V
nA
nA
I
C
=100μ A,I
E
=0
I
C
=1mA,I
B
=0
I
E
=10
μ
A,I
C
=0
V
CB
=120V,I
E
=0
V
EB
=4V,I
C
=0
V
CE
=5V,I
C
=1mA
V
CE
=5V,I
C
=10mA
V
CE
=5V,I
C
=50mA
I
C
=10mA,I
B
=1mA
I
C
=50mA,I
B
=5mA
I
C
=10mA,I
B
=1mA
I
C
=50mA,I
B
=5mA
V
CE
=10V,I
C
=10mA,f=100MHz
V
CB
=10V,I
E
=0,f=1MHz
V
CE
=5V,I
c
=0.2mA,
f=10Hzto15.7KHZ,Rs=10Ω
Base-emitter voltage
Transition frequency
Collector output capacitance
Noise figure
１
JinYu
semiconductor
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