C945
TRANSISTOR (NPN)
SOT-23
FEATURE
Excellent h
FE
Linearity
Low noise
Complementary to A733
1. BASE
2. EMITTER
3. COLLECTOR
MARKING:CR·
MAXIMUM RATINGS (T
A
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
60
50
5
150
200
150
-55-150
Units
V
V
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
Symbol
V(BR)
CBO
V(BR)
CEO
V(BR)
EBO
I
CBO
I
CER
I
EBO
h
FE(1)
h
FE(2)
V
CE
(sat)
V
BE
(sat)
f
T
C
ob
NF
Test
conditions
MIN
60
50
5
0.1
0.1
0.1
130
40
0.3
1
150
3.0
4
10
V
V
MHz
pF
dB
400
TYP
MAX
UNIT
V
V
V
uA
uA
uA
I
C
=100uA, I
E
=0
I
C
=1mA , I
B
=0
I
E
=0.1mA, I
C
=0
V
CB
=60V, I
E
=0
V
CE
=55V,R=10MΩ
V
EB
=5V ,
V
CE
=6 V ,
V
CE
=6 V ,
I
C
=0
I
C
=1mA
I
C
=0.1mA
I
C
=100mA, I
B
=10mA
I
C
=100mA, I
B
=10mA
V
CE
=6V,I
C
=10mA,f =30 MHz
V
CB
=10V,I
E
=0,f=1MH
Z
V
CE
=
6V,I
C
=0.1
mA
R
g
=10
kΩ
,f=1k
MH
Z
CLASSIFICATION OF h
FE(1)
Rank
Range
L
130-200
H
200-400
１
JinYu
semiconductor
www.htsemi.com
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