BF622
TRANSISTOR (NPN)
FEATURES
Low Current
High Voltage
AAPLICATIONS
Video Output Stages
MARKING:DA
SOT-89-3L
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
250
250
5
50
500
250
150
-55~+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
Test
conditions
Min
250
250
5
10
50
50
0.6
60
V
MHz
Typ
Max
Unit
V
V
V
nA
nA
I
C
=100µA,I
E
=0
I
C
=1mA,I
B
=0
I
E
=100µA,I
C
=0
V
CB
=200V,I
E
=0
V
EB
=5V,I
C
=0
V
CE
=20V, I
C
=25mA
I
C
=30mA,I
B
=5mA
V
CE
=10V,I
C
=10mA, f=100MHz
１
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semiconductor
www.htsemi.com
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