BCX7 0J,K
TRANSISTOR (NPN)
SOT-23
FEATURES
Low current
Low voltage
1. BASE
2. EMITTER
3. COLLECTOR
MARKING : BCX70J：AJ, BCX70K:AK
MAXIMUM RATINGS (T
A
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Value
45
45
5
200
250
150
-55-150
Units
V
V
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CES
h
FE1
DC current gain
BCX70J
h
FE2
h
FE3
h
FE1
DC current gain
BCX70K
h
FE2
h
FE3
Collector-emitter saturation voltage
V
CE(sat)1
V
CE(sat)2
V
BE(sat)1
V
BE(sat)2
V
BE
C
ob
NF
f
T
Test
I
C
=10μA,I
E
=0
I
C
=2mA,I
B
=0
I
E
=1μA,I
C
=0
V
CE
=45V,V
BE
=0
V
CE
=5V,I
C
=10μA
V
CE
=5V,I
C
=2mA
V
CE
=1V,I
C
=50mA
V
CE
=5V,I
C
=10μA
V
CE
=5V,I
C
=2mA
V
CE
=1V,I
C
=50mA
I
C
= 10mA I
B
= 0.25 mA
I
C
= 50mA I
B
=1.25 mA
I
C
= 10mA I
B
=-0.25 mA
I
C
= 50mA I
B
= 1.25 mA
V
CE
=5V,I
C
=2mA
V
CB
=10V,I
E
=0,f=1MHz
V
CE
=5V,I
C
=200μA,
f=1KHz,BW=200Hz,RS=2KΩ
V
CE
= 5 V, I
C
=10mA,f =100 MHz
100
250
30
250
90
100
380
100
0.05
0.1
0.6
0.7
0.55
1.7
6
0.35
0.55
0.85
1.05
0.75
V
V
V
V
V
pF
dB
MHz
630
460
conditions
MIN
45
45
5
20
TYP
MAX
UNIT
V
V
V
nA
Base -emitter saturation voltage
Base-emitter voltage
Collector output capacitance
Noise Figure
Gain-Bandwidth Product
１
JinYu
semiconductor
www.htsemi.com
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