BCX51,BCX52,BCX53
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
-45
-60
-100
-45
-60
-80
-5
Typ
Max
Unit
BCX51
BCX52
BCX53
BCX51
BCX52
BCX53
Collector-base breakdown voltage
V(BR)CBO
IC=-100µA,IE=0
IC=-1mA,IB=0
V
Collector-emitter breakdown voltage
V(BR)CEO
V
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
V(BR)EBO
ICBO
IE=-100µA,IC=0
VCB=-30V,IE=0
VEB=-5V,IC=0
V
-0.1
-0.1
µA
µA
IEBO
hFE(1)
hFE(2)
hFE(3)
VCE(sat)
VBE
VCE=-2V, IC=-5mA
63
63
40
DC current gain
VCE=-2V, IC=-150mA
VCE=-2V, IC=-0.5A
250
Collector-emitter saturation voltage
Base -emitter voltage
IC=-0.5A,IB=-50mA
-0.5
-1
V
V
VCE=-2V, IC=-0.5A
fT
VCE=-5V,IC=-10mA, f=100MHz
50
MHz
Transition frequency
CLASSIFICATION OF hFE(2)
BCX51
BCX51-10
BCX51-16
BCX52-16
BCX53-16
BCX52
RANK
BCX52-10
BCX53-10
BCX53
RANGE
63–250
63–160
100–250
2
JinYu
semiconductor
www.htsemi.com
Date:2011/05
HTSEMI [ SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. ]
