BC846A,B / BC847A, B, C / BC848A, B, C
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
BC846
BC847
BC848
Collector-emitter breakdown voltage
BC846
BC847
BC848
Emitter-base breakdown voltage
Collector cut-off current
BC846
BC847
BC848
Collector cut-off current
BC846
BC847
BC848
Emitter cut-off current
DC current gain
BC846A,847A,848A
BC846B,847B,848B
BC847C,BC848C
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
V
CE
(sat)
V
BE
(sat)
I
C
=100mA, I
B
= 5mA
I
C
=100mA, I
B
= 5mA
V
CE
= 5 V, I
C
= 10mA
h
FE
V
CE
= 5V,
I
C
= 2mA
I
EBO
I
CEO
I
CBO
V
EBO
I
E
= 10µA, I
C
=0
V
CB
=70 V , I
E
=0
V
CB
=50 V , I
E
=0
V
CB
=30 V , I
E
=0
V
CE
=60 V , I
B
=0
V
CE
=45 V , I
B
=0
V
CE
=30 V , I
B
=0
V
EB
=5 V ,
I
C
=0
110
200
420
0.1
220
450
800
0.5
1.1
100
V
V
MHz
0.1
0.1
V
CEO
I
C
= 10mA, I
B
=0
V
CBO
I
C
= 10µA, I
E
=0
Symbol
Test
conditions
MIN
80
50
30
65
45
30
6
V
V
V
TYP
MAX
UNIT
μ
A
μ
A
μ
A
f
T
C
ob
f=
100MHz
V
CB
=10V,f=
1
MHz
4.5
pF
２
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semiconductor
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