BC847BV
DUAL TRANSISTOR
(NPN)
SOT-563
FEATURES
Epitaxial Die Construction
Complementary PNP Type Available
(BC857BV)
Ultra-Small Surface Mount Package
Marking: K4V
MAXIMUM RATINGS(T
A
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θ
JA
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Thermal Resistance. Junction to Ambient Air
Junction Temperature
Storage Temperature
Value
50
45
6
0.1
0.15
833
150
-55 to +150
Units
V
V
V
A
W
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Transition frequency
Output
capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
V
CE(sat)
V
BE(sat)
V
BE
f
T
C
ob
NF
unless
Test
otherwise
specified)
MIN
50
45
6
15
100
200
450
100
300
700
900
580
660
700
770
100
4.5
10
mV
mV
mV
MHz
pF
dB
TYP
MAX
UNIT
V
V
V
nA
nA
conditions
I
C
=10μA,I
E
=0
I
C
=10mA,I
B
=0
I
E
=1μA,I
C
=0
V
CB
=30V,I
E
=0
V
EB
=5V,I
C
=0
V
CE
=5V,I
C
=2mA
I
C
=10mA,I
B
=0.5mA
I
C
=100mA,I
B
=5mA
I
C
=10mA,I
B
=0.5mA
I
C
=100mA,I
B
=5mA
V
CE
=5V,I
C
=2mA
V
CE
=5V,I
C
=10mA
V
CE
=5V,I
C
=10mA,f=100MHz
V
CB
=10V,I
E
=0,f=1MHz
V
CE
=5V,Rs=2kΩ,
f=1kHz,BW=200Hz
Noise Figure
1
JinYu
semiconductor
www.htsemi.com
Date:2011/ 05
HTSEMI [ SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. ]
