BC808
TRANSISTOR (PNP)
SOT-23
FEATURES
Suitable for AF-Driver stages and low power output stages
Complement to BC818
1.
BASE
2.
EMITTER
3.
COLLECTOR
MAXIMUM RATINGS (T
A
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C*
T
j
T
stg
Parameter
Value
-30
-25
-5
-0.8
300
150
-65-150
Units
V
V
V
A
mW
℃
℃
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current –Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
DC current gain
h
FE(2)
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
V
CE(sat)
V
BE
V
CE
=
-1
V, I
C
=
-300
mA
I
C
=-
500
mA, I
B
=
-50
mA
V
CE
=
-1
V, I
C
=
-300
mA
V
CE
=
-5
V, I
C
=
-10
mA, f=
50
MHz
V
CB
=
-10
V, I
E
=0, f=
1
MHz
Test
I
C
=-100μA, I
E
=0
I
C
=
-10
mA, I
B
=0
I
E
=
-100
μA,
I
C
=0
V
CB
=
-25
V, I
E
=0
V
EB
=
-4
V, I
C
=0
V
CE
=
-1
V, I
C
=
-100
mA
conditions
MIN
TYP
MAX
UNIT
V
V
V
-30
-25
-5
-0.1
-0.1
100
60
-0.7
-1.2
100
12
40
250-630
5G
630
μA
μA
V
V
MHz
pF
f
T
C
ob
CLASSIFICATION OF
Rank
Range
h
FE(1)
Marking
１
JinYu
h
FE
16
100-250
5E
25
160-400
5F
semiconductor
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