BAP51-02
GENERAL PURPOSE PIN DIODES
FEATURES
Low diode capacitance
MARKING: A5
Low diode forward resistance
Maximum Ratings and Electrical Characteristics, Single Diode @T
A
=25℃
Parameter
Continuous reverse voltage
Continuous Forward Current
Power Dissipation (T
A
=90℃)
Thermal Resistance from Junction to
soldering point
Junction temperature
Storage temperature
Symbol
V
R
I
F
Pd
R
θJS
T
j
T
STG
Limits
60
50
715
85
-65~+150
-65~+150
Unit
V
mA
mW
℃/W
℃
℃
Electrical Ratings @T
A
=25℃
Parameter
Continuous reverse voltage
Forward voltage
Reverse current
Symbol
V
R
V
F
I
R
C
d1
Diode capacitance
C
d2
C
d3
r
D
Diode forward resistance
r
D
r
D
0.4*
0.55
0.35
9
6.5
2.5
Min.
50
1.1
100
Typ.
Max.
Unit
V
V
nA
pF
pF
pF
Ω
Ω
Ω
Conditions
I
R
=10μA
I
F
=50mA
V
R
=50V
V
R
=0V,f=1MHz
V
R
=1V,f=1MHz
V
R
=5V,f=1MHz
I
F
=0.5mA , f=100MHz;note1
I
F
=1mA , f=100MHz;note1
I
F
=10mA , f=100MHz;note1
Note 1. Guaranteed on AQL basis: inspection level S4,AQL 1.0.
１
JinYu
semiconductor
www.htsemi.com
Ｄ�½��½��½�：２０１１／０５
HTSEMI [ SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. ]
