B5817W-5819W
SCHOTTKY BARRIER DIODE
FEATURES
For use in low voltage, high frequency inverters
Free wheeling, and polarity protection applications.
MARKING:
B5817W: SJ
B5818W:SK
B5819W: SL
Maximum Ratings and Electrical Characteristics, Single Diode @T
A
=25℃
Parameter
Non-Repetitive Peak reverse voltage
Peak repetitive Peak reverse voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
Peak forward surge current @=8.3ms
Repetitive Peak Forward Current
Power Dissipation
Thermal
Ambient
Resistance
Junction
to
Symbol
V
RM
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
I
FRM
Pd
R
θJA
T
STG
SOD-123
+
-
B5817W
20
20
14
B5818W
30
30
21
1
9
1.5
500
250
-65~+150
B5819W
40
40
28
Unit
V
V
V
A
A
A
mW
℃/W
℃
Storage temperature
ELECTRICAL CHARACTERISTICS (Tamb=25℃
unless
otherwise
specified)
Parameter
Reverse breakdown voltage
Symbol
V
(BR)
Test
I
R
= 1mA
conditions
B5817W
B5818W
B5819W
B5817W
B5818W
B5819W
I
F
=1A
I
F
=3A
I
F
=1A
I
F
=3A
I
F
=1A
I
F
=3A
MIN
20
30
40
MAX
UNIT
V
Reverse voltage leakage current
I
R
V
R
=20V
V
R
=30V
V
R
=40V
B5817W
B5818W
B5819W
1
0.45
0.75
0.55
0.875
0.6
0.9
120
mA
V
V
V
Forward voltage
V
F
Diode capacitance
C
D
V
R
=4V, f=1MHz
pF
１
JinYu
semiconductor
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